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LM285DG4-2-5 데이터시트(PDF) 4 Page - Texas Instruments

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부품명 LM285DG4-2-5
상세설명  Micropower Voltage References
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LM285-2.5, LM385-2.5, LM385B-2.5
SLVS023K – JANUARY 1989 – REVISED MARCH 2016
www.ti.com
Product Folder Links: LM285-2.5 LM385-2.5 LM385B-2.5
Submit Documentation Feedback
Copyright © 1989–2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
IR
Reverse current
30
mA
IF
Forward current
10
mA
Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds
260
°C
TJ
Junction temperature
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±1000
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
IZ
Reference current
0.02
20
mA
TA
Operating free-air temperature
LM285-2.5
–40
85
°C
LM385-2.5, LM385B-2.5
0
70
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.4 Thermal Information
THERMAL METRIC(1)
LMx85-2.5, LM385B-2.5
UNIT
D (SOIC)
LP (T0-92)
PW (TSSOP)
8 PINS
3 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
112
157
168.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
58.5
80.3
53.7
°C/W
RθJB
Junction-to-board thermal resistance
52.1
N/A
96.4
°C/W
ψJT
Junction-to-top characterization parameter
15.8
24.6
4.5
°C/W
ψJB
Junction-to-board characterization parameter
51.7
136.2
94.7
°C/W


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