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LM285DG4-2-5 데이터시트(PDF) 4 Page - Texas Instruments |
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LM285DG4-2-5 데이터시트(HTML) 4 Page - Texas Instruments |
4 / 25 page 4 LM285-2.5, LM385-2.5, LM385B-2.5 SLVS023K – JANUARY 1989 – REVISED MARCH 2016 www.ti.com Product Folder Links: LM285-2.5 LM385-2.5 LM385B-2.5 Submit Documentation Feedback Copyright © 1989–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT IR Reverse current 30 mA IF Forward current 10 mA Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds 260 °C TJ Junction temperature 150 °C Tstg Storage temperature –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT IZ Reference current 0.02 20 mA TA Operating free-air temperature LM285-2.5 –40 85 °C LM385-2.5, LM385B-2.5 0 70 (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) LMx85-2.5, LM385B-2.5 UNIT D (SOIC) LP (T0-92) PW (TSSOP) 8 PINS 3 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 112 157 168.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 58.5 80.3 53.7 °C/W RθJB Junction-to-board thermal resistance 52.1 N/A 96.4 °C/W ψJT Junction-to-top characterization parameter 15.8 24.6 4.5 °C/W ψJB Junction-to-board characterization parameter 51.7 136.2 94.7 °C/W |
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