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GaAs MMIC Power Amplifier, 2.0 W

14.0 - 14.5 GHz

Rev. V6

AM42-0007-DIE

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Functional Schematic

Features

 High Linear Gain: 22 dB Typical.

 High Saturated Output Power: +33 dBm Typical

 High Power Added Efficiency: 22% Typical

 High P1dB: +32 dBm Typical

 50 Ω Input / Output Broadband Matched

 Integrated Output Power Detector

 High Performance Ceramic Bolt Down Package

Description

The AM42-0007-DIE is a three stage MMIC linear

power amplifier fabricated on a mature 0.5 micron

MBE based GaAs process. The AM42-0007-DIE

employs a fully

matched chip with integral bias

networks and output power detector.

This GaAs MMIC power amplifier is ideally suited for

used as an output stage or driver in applications for

VSAT applications.

Ordering Information

Part Number

Package

AM42-0007-DIE

DIE

Parameter

Absolute Maximum

+12 Volts

-10 Volts

Power Dissipation

17.9 W

RF Input Power

+23 dBm

ChannelTemperature

+150 °C

Storage Temperature

-65 °C to +150 °C

1. Exceeding any one or combination of these limits may cause

(resistor network used) followed by connecting +9 volts to pin

4.

It is recommended that the die be mounted with Au/Sn eutectic