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TLP161J 데이터시트(PDF) 3 Page - Toshiba Semiconductor |
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TLP161J 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page TLP161J 2014-09-22 3 Individual Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit LED Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ⎯ ⎯ 10 μA Capacitance CT V = 0, f = 1 MHz ⎯ 30 ⎯ pF Detector Peak off-state current IDRM VDRM = 600 V ⎯ 10 1000 nA Peak on-state voltage VTM ITM = 70 mA ⎯ 1.7 2.8 V Holding current IH ⎯ ⎯ 0.6 ⎯ mA Critical rate of rise of off-state voltage dv/dt Vin = 240 Vrms, Ta = 85°C (Figure 1) 200 500 ⎯ V/ μs Critical rate of rise of commutating voltage dv/dt(c) Vin = 60 Vrms, IT = 15 mA (Figure 1) ⎯ 0.2 ⎯ V/ μs Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Trigger LED current IFT VT = 6 V ⎯ 5 10 mA Inhibit voltage VIH IF = Rated IFT ⎯ ⎯ 50 V Leakage in inhibited state IIH IF = Rated IFT, VT = Rated VDRM ⎯ 200 600 μA Capacitance (input to output) CS VS = 0, f = 1 MHz ⎯ 0.8 ⎯ pF Isolation resistance RS VS = 500 V, R.H. ≤ 60% 1 × 10 12 10 14 ⎯ Ω Isolation voltage BVS AC, 1 minute 2500 ⎯ ⎯ Vrms AC, 1 second, in oil ⎯ 5000 ⎯ DC, 1 minute, in oil ⎯ 5000 ⎯ Vdc Figure 1 dv/dt Test Circuit 4 3 1 + Rin RL 6 − 4 k Ω 120 Ω Vin VCC 5 V, VCC 0 V dv/dt(c) dv/dt |
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