SSM5H01TU

2014-03-01

1

Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode

SSM5H01TU

DC-DC Converter

• Combined Nch MOSFET and Schottky Diode into one Package.

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

30

V

Gate-Source voltage

±20

V

DC

1.4

Drain current

Pulse

2.8

A

0.5

Drain power dissipation

t

= 10s

0.8

W

Channel temperature

150

°C

DIODE

Characteristics

Symbol

Rating

Unit

Maximum (peak) reverse voltage

25

V

Reverse voltage

20

V

Average forward current

0.5

A

Peak one cycle surge forward current

(non-repetitive)

2 (50 Hz)

A

Junction temperature

125

°C

Characteristics

Symbol

Rating

Unit

Storage temperature

−55~125

°C

Operating temperature

(Note 3)

−40~100

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm

Note 2: The pulse width limited by max channel temperature.

Note 3: Operating temperature limited by max channel temperature and max junction temperature.

Unit: mm

UFV

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-2R1A

Weight: 7 mg (typ.)

Start of commercial production

2002-05