SSM3K116TU_14 datasheet(2/5 Pages) TOSHIBA

부품명	SSM3K116TU

상세설명	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

SSM3K116TU

2014-03-01

2

Switching Time Test Circuit

(a) Test Circuit

(b) VIN

Marking

Equivalent Circuit (top view)

Precaution

Vth can be expressed as the voltage between gate and source when the low operating current value is ID=0.1mA for

this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower

voltage than Vth.

(The relationship can be established as follows: VGS (off) < Vth < VGS (on))

Take this into consideration when using the device.

Handling Precaution

When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is

protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

(c) VOUT

VDD = 10 V

RG = 4.7 Ω

Duty ≤ 1%

VIN: tr, tf < 5 ns

Common Source

Ta

= 25°C

VDD

OUT

IN

2.5 V

0

10

μs

tf

ton

90%

10%

2.5 V

0 V

10%

90%

toff

tr

VDD

VDS (ON)

KK9

1

2

3

1

2

3

유사한 부품 번호 - SSM3K116TU_14

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	SSM3K116TU	142Kb / 5P	Silicon N Channel MOS Type High Speed Switching Applications
Toshiba Semiconductor	SSM3K116TU	1Mb / 73P	Bipolar Small-Signal Transistors

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SSM3K116TU 데이터시트(PDF) 2 Page - Toshiba Semiconductor

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유사한 부품 번호 - SSM3K116TU_14

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