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SSM6K210FE 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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SSM6K210FE 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page SSM6K210FE 2014-03-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain-source breakdown voltage V (BR) DSS ID = 1 mA, VGS = 0 V 30 ⎯ ⎯ V Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = 5 V, ID = 1 mA 1.1 ⎯ 2.6 V Forward transfer admittance ⏐Yfs⏐ VDS = 5 V, ID = 0.6 A (Note 2) 0.73 1.45 ⎯ S ID = 0.6 A, VGS = 10 V (Note 2) ⎯ 171 228 Drain-source ON-resistance RDS (ON) ID = 0.6 A, VGS = 4.0 V (Note 2) ⎯ 271 371 m Ω Input capacitance Ciss ⎯ 57 ⎯ Output capacitance Coss ⎯ 33 ⎯ Reverse transfer capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz ⎯ 12 ⎯ pF Total Gate Charge Qg ⎯ 2.8 ⎯ Gate-Source Charge Qgs ⎯ 1.6 ⎯ Gate-Drain Charge Qgd VDS = 15 V, ID = 1.5 A, VGS = 10 V ⎯ 1.2 ⎯ nC Turn-on time ton ⎯ 12.0 ⎯ Switching time Turn-off time toff VDD = 15 V, ID = 0.6 A, VGS = 0 to 4.0 V, RG = 10 Ω ⎯ 6.9 ⎯ ns Drain-source forward voltage VDSF ID = -1.4 A, VGS = 0 V (Note 2) ⎯ -0.85 -1.2 V Note 2: Pulse test Switching Time Test Circuit Notice on Usage Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the SSM6K210FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 4.0 V ton toff (b) VIN (c) VOUT 0 V VDD VDS (ON) tr tf 10% 90% 90% 10% (a) Test Circuit VDD = 15 V RG = 10 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 0 4.0 V IN OUT VDD 10 μs |
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