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ADV3225 데이터시트(PDF) 7 Page - Analog Devices

부품명 ADV3225
상세설명  750 MHz, 16 x 8 Analog Crosspoint Switch
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ADV3225 데이터시트(HTML) 7 Page - Analog Devices

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Data Sheet
ADV3224/ADV3225
Rev. B | Page 7 of 24
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
Rating
Analog Supply Voltage (AVCC to AVEE)
11 V
Digital Supply Voltage (DVCC to DGND)
6 V
Supply Potential Difference
(AVCC − DVCC)
±0.5 V
Ground Potential Difference
(AGND − DGND)
±0.5 V
Maximum Potential Difference
(DVCC − AVEE)
11 V
Analog Input Voltage
AVEE < VIN < AVCC
Digital Input Voltage
DGND < DIN < DVCC
Exposed Paddle Voltage
AGND
Output Voltage (Disabled Analog
Output)
AVEE < VOUT < AVCC
Output Short-Circuit
Duration
Momentary
Current
Internally limited to
55 mA
Temperature
Storage Temperature Range
−65°C to +125°C
Operating Temperature Range
−40°C to +85°C
Junction Temperature
150°C
Lead Temperature (Soldering, 10 sec)
300°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 6. Thermal Resistance
Package Type
θJA
θJC
Unit
72-Lead LFCSP_VQ
29
0.5
°C/W
POWER DISSIPATION
The ADV3224/ADV3225 operate with ±5 V supplies and can
drive loads down to 100 Ω, resulting in a wide range of possible
power dissipations. For this reason, extra care must be taken
when derating the operating conditions based on ambient
temperature.
Packaged in the 72-lead LFCSP, the ADV3224/ADV3225 junction-
to-ambient thermal impedance (θJA) is 29°C/W. For long-term
reliability, the maximum allowed junction temperature of the
die should not exceed 125°C; even temporarily exceeding this
limit can cause a shift in parametric performance due to a
change in stresses exerted on the die by the package. Exceeding
a junction temperature of 150°C for an extended period can
result in device failure. In Figure 4, the curve shows the range
of allowed internal die power dissipation that meets these condi-
tions over the −40°C to +85°C ambient temperature range.
When using Figure 4, do not include the external load power
in the maximum power calculation, but do include the load
current dropped on the die output transistors.
0
1
2
3
4
5
6
7
–40
–20
0
20
40
60
80
AMBIENT TEMPERATURE (°C)
TJ = 150°C
Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature
ESD CAUTION


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