전자부품 데이터시트 검색엔진 |
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BC850BW 데이터시트(PDF) 1 Page - Diotec Semiconductor |
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BC850BW 데이터시트(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 1) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2) Tested with pulses t p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen t p = 300 :s, Schaltverhältnis # 2% 12 01.11.2003 12 3 Type Code 2±0.1 1±0.1 0.3 1.3 BC 846W ... BC 850W General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 200 mW Plastic case SOT-323 Kunststoffgehäuse Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25 /C) Grenzwerte (T A = 25 /C) BC 846W BC 847W BC 850W BC 848W BC 849W Collector-Emitter-voltage B open V CE0 65 V 45 V 30 V Collector-Base-voltage E open V CB0 80 V 50 V 30 V Emitter-Base-voltage C open V EB0 6 V 5 V Power dissipation – Verlustleistung P tot 200 mW 1) Collector current – Kollektorstrom (DC) I C 100 mA Peak Collector current – Kollektor-Spitzenstrom I CM 200 mA Peak Base current – Basis-Spitzenstrom I BM 200 mA Peak Emitter current – Emitter-Spitzenstrom - I EM 200 mA Junction temperature – Sperrschichttemperatur T j 150 /C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /C Characteristics (T j = 25 /C) Kennwerte (T j = 25 /C) Group A Group B Group C DC current gain – Kollektor-Basis-Stromverhältnis 2) V CE = 5 V, IC = 10 :Ah FE typ. 90 typ. 150 typ. 270 V CE = 5 V, IC = 2 mA h FE 110...220 200...450 420...800 h-Parameters at V CE = 5V, IC = 2 mA, f = 1 kHz Small signal current gain – Stromverstärkung h fe typ. 220 typ. 330 typ. 600 Input impedance – Eingangs-Impedanz h ie 1.6...4.5 k S 3.2...8.5 k S 6...15 k S Output admittance – Ausgangs-Leitwert h oe 18 < 30 :S 30 < 60 :S 60 < 110 :S Reverse voltage transfer ratio Spannungsrückwirkung h re typ.1.5 *10-4 typ. 2 *10-4 typ. 3 *10-4 |
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