전자부품 데이터시트 검색엔진 |
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BF821 데이터시트(PDF) 1 Page - Diotec Semiconductor |
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BF821 데이터시트(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 1) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2) Tested with pulses t p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen t p = 300 :s, Schaltverhältnis # 2% 8 01.11.2003 1.1 2.9 ±0.1 0.4 1 2 3 Type Code 1.9 BF 821, BF 823 High Voltage Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25 /C) Grenzwerte (T A = 25 /C) BF 821 BF 823 Collector-Emitter-voltage B open - V CE0 300 V 250 V Collector-Base-voltage E open - V CB0 300 V 250 V Emitter-Base-voltage C open - V EB0 5 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (dc) - I C 50 mA Peak Collector current – Kollektor-Spitzenstrom - I CM 100 mA Peak Base current – Basis-Spitzenstrom - I BM 50 mA Junction temperature – Sperrschichttemperatur T j 150 /C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /C Characteristics (T j = 25 /C) Kennwerte (T j = 25 /C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom I E = 0, - VCB = 200 V - I CB0 – – 10 nA I E = 0, - VCB = 200 V, Tj = 150 /C- I CB0 – – 10 :A Emitter-Base cutoff current – Emitterreststrom I C = 0, - VEB = 5 V - I EB0 – – 50 nA Collector saturation volt. – Kollektor-Sättigungsspg. 2) - I C = 30 mA, - IB = 5 mA - V CEsat – – 800 mV |
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