2N2060 datasheet(1/2 Pages) MICROSEMI

부품명	2N2060

상세설명	UNITIZED DUAL NPN SILICON TRANSISTOR

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제조업체	MICROSEMI [Microsemi Corporation]

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TECHNICAL DATA

UNITIZED DUAL NPN SILICON TRANSISTOR

Qualified per MIL-PRF-19500/270

Devices

Qualified Level

2N2060

2N2060L

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

2N2060

Unit

Collector-Emitter Voltage

VCEO

60

Vdc

Collector-Base Voltage

VCBO

100

Vdc

Emitter-Base Voltage

VEBO

7.0

Vdc

Collector Current

IC

500

mAdc

One

Section

Both

Sections

Total Power Dissipation

@ TA = +25

0C (1)

@ TC = +25

0C (2)

PT

540

1.5

600

2.12

mW

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

0C

1) Derate linearly 3.08 mW/

0C for TA > 250C for one section, 3.48 mW/0C for both sections

2) Derate linearly 8.6 mW/

0C for TC > 250C for one section, 12.1 mW/0C for both sections

TO-78*

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (TA = +25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(3)

RBE ≤ 10 Ω, IC = 10 mAdc

V(BR)CER

80

Vdc

Collector-Emitter Breakdown Voltage

IC = 30 mAdc

V(BR)CEO

60

Vdc

Collector-Base Cutoff Current

VCB = 100 Vdc

VCB = 80 Vdc

ICBO

10

2.0

µAdc

ηAdc

Emitter-Base Cutoff Current

VEB = 7.0 Vdc

VEB = 5.0 Vdc

IEBO

10

2.0

µAdc

ηAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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