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GS72108TP-8I 데이터시트(PDF) 3 Page - GSI Technology |
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GS72108TP-8I 데이터시트(HTML) 3 Page - GSI Technology |
3 / 12 page Rev: 1.08 7/2002 3/12 © 1999, Giga Semiconductor, Inc. Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS72108TP/J Note: X: “H” or “L” Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec- ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. Truth Table CE OE WE DQ1 to DQ8 VDD Current H X X Not Selected ISB1, ISB2 L L H Read IDD LX L Write LH H High Z Absolute Maximum Ratings Parameter Symbol Rating Unit Supply Voltage VDD –0.5 to +4.6 V Input Voltage VIN –0.5 to VDD +0.5 ( ≤ 4.6 V max.) V Output Voltage VOUT –0.5 to VDD +0.5 ( ≤ 4.6 V max.) V Allowable power dissipation PD 0.7 W Storage temperature TSTG –55 to 150 oC |
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