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IRF5803PBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRF5803PBF 데이터시트(HTML) 1 Page - International Rectifier |
1 / 9 page Parameter Max. Units VDS Drain- Source Voltage -40 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.4 ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -2.7 A IDM Pulsed Drain Current -27 PD @TA = 25°C Power Dissipation 2.0 PD @TA = 70°C Power Dissipation 1.3 Linear Derating Factor 16 mW/°C VGS Gate-to-Source Voltage ± 20 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 04/20/10 www.irf.com 1 IRF5803PbF HEXFET® Power MOSFET Absolute Maximum Ratings W VDSS RDS(on) max (mW) ID -40V 112@VGS = -10V -3.4A 190@VGS = -4.5V -2.7A TSOP-6 These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Description l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Top View 1 2 D G A D D D S 3 4 5 6 Parameter Max. Units RθJA Maximum Junction-to-Ambient 62.5 °C/W Thermal Resistance PD-95262B |
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