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4N33ST2-G 데이터시트(PDF) 3 Page - CT Micro International Corporation

부품명 4N33ST2-G
상세설명  DC Input 6-Pin Photodarlington Optocoupler
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제조업체  CTMICRO [CT Micro International Corporation]
홈페이지  http://www.ct-micro.com/
Logo CTMICRO - CT Micro International Corporation

4N33ST2-G 데이터시트(HTML) 3 Page - CT Micro International Corporation

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CT Microelectronics
Rev 1
Proprietary & Confidential
Page 3
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Electrical Characteristics T
A = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
VF
Forward voltage
IF=10mA
1.24
1.4
V
VF
Forward voltage
H11B3
IF=50mA
1.45
1.5
V
IR
Reverse Current
VR = 6V
-
-
5
µ A
CIN
Input Capacitance
f= 1MHz
-
45
-
pF
Detector Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
BVCEO
Collector-Emitter Breakdown
IC= 100µA
55
-
-
V
BVECO
Emitter-Collector Breakdown
IE= 100µA
7
-
-
V
BVCBO
Collector-Base Breakdown
IC= 100µA
55
-
-
V
ICEO
Collector-Emitter Dark Current
VCE= 10V, IF=0mA
-
-
100
nA
Transfer Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
CTR
Current
Transfer
Ratio
4N29, 4N30
IF= 10mA, VCE= 10V
100
-
-
%
4N31
50
-
-
4N32, 4N33
500
-
-
H11B1
IF= 1mA, VCE= 10V
500
-
-
H11B2
200
-
-
H11B3
100
-
-
H11B255
IF= 10mA, VCE= 5V
100
-
-
TIL113
IF= 10mA, VCE= 1V
300
-
-
VCE(SAT)
Collector-
Emitter
Saturation
Voltage
4N29, 4N30, 4N32,
4N33
IF= 8mA, IC= 2mA
-
-
1.0
V
4N31, TIL113
IF= 8mA, IC= 2mA
-
-
1.2
H11B1, H11B2,
H11B3
IF= 1mA, IC= 1mA
-
-
1.0
H11B255
IF=50mA, IC= 50mA
-
-
1.0
RIO
Isolation Resistance
VIO= 500VDC
1x1011
CIO
Isolation Capacitance
f= 1Mhz
0.25
pF


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