전자부품 데이터시트 검색엔진 |
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SBP13007A 데이터시트(PDF) 1 Page - SemiWell Semiconductor |
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SBP13007A 데이터시트(HTML) 1 Page - SemiWell Semiconductor |
1 / 6 page Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage ( VBE = 0 ) 700 V VCEO Collector-Emitter Voltage ( IB = 0 ) 400 V VEBO Emitter-Base Voltage ( IC = 0 ) 9.0 V IC Collector Current 8.0 A ICM Collector Peak Current ( tP < 5 ms ) 16 A IB Base Current 4.0 A IBM Base Peak Current ( tP < 5 ms ) 8.0 A PC Total Dissipation at TC = 25 °C 80 W TSTG Storage Temperature - 65 ~ 150 °C TJ Max. Operating Junction Temperature 150 °C Thermal Characteristics Symbol Parameter Value Units RθJC Thermal Resistance, Junction-to-Case 1.56 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W SBP13007A Mar, 2003. Rev. 3 1/6 Features - Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 390mV@5.0A/1.0A) - Wide Reverse Bias S.O.A General Description This device is designed for high voltage, high speed switching char- acteristic required such as lighting system, switching mode power supply. High Voltage Fast-Switching NPN Power Transistor 2.Collector 3.Emitter 1.Base Symbol ○ ○ ○ TO-220 SemiWell Semiconductor 1 2 3 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved |
유사한 부품 번호 - SBP13007A |
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유사한 설명 - SBP13007A |
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