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SBP13007A 데이터시트(PDF) 2 Page - SemiWell Semiconductor |
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SBP13007A 데이터시트(HTML) 2 Page - SemiWell Semiconductor |
2 / 6 page Electrical Characteristics ( T C = 25 °C unless otherwise noted ) Symbol Parameter Condition Min Typ Max Units ICEV Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V TC = 100 °C - - 1.0 5.0 mA VCEO(sus) Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA 400 -- V VCE(sat) Collector-Emitter Saturation Voltage IC = 2.0A IB = 0.4A IC = 5.0A IB = 1.0A IC = 8.0A IB = 2.0A IC = 5.0A IB = 1.0A TC = 100 °C - - 0.5 1.0 2.5 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 2.0A IB = 0.4A IC = 5.0A IB = 1.0A IC = 5.0A IB = 1.0A TC = 100 °C -- 1.2 1.6 1.5 V hFE DC Current Gain IC = 2.0A VCE = 5V IC = 5.0A VCE = 5V 10 5- 40 40 ts tf Resistive Load Storage Time Fall Time IC = 5.0A VCC = 125V IB1 = 1.0A IB2 = - 1.0A TP = 25㎲ - 1.5 0.17 3.0 0.4 ㎲ ts tf Inductive Load Storage Time Fall Time VCC = 15V IC = 5.0A IB1 = 1.0A IB2 = -2.5A LC = 0.35mH Vclamp = 300V - 0.8 0.06 2.0 0.12 ㎲ ts tf Inductive Load Storage Time Fall Time VCC = 15V IC = 5.0A IB1= 1.0A IB2 = -2.5A LC = 0.35mH Vclamp = 300V TC = 100 °C - 1.0 0.07 3.0 0.15 ㎲ SBP13007A 2/6 ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2% |
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