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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BU4508AF 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU4508AF 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor BU4508AF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High-voltage high-speed switching APPLICATIONS ·Designed for use in horizontal deflection circuits of CTV receivers and p.c monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 7 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 45 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W |
유사한 부품 번호 - BU4508AF |
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유사한 설명 - BU4508AF |
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