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FDS6986S 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
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FDS6986S 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page FDS6986S Rev C1 (W) Electrical Characteristics (continued) T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current Q2 Q1 3.0 1.3 A tRR Reverse Recovery Time 17 ns QRR Reverse Recovery Charge IF = 10 A, diF/dt = 300 A/µs (Note 3) Q2 12.5 nC VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2) Q2 Q1 0.5 0.74 0.7 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in 2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in 2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. |
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