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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF841 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF841 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRF841 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 450 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4.4A 0.85 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 450V; VGS= 0 250 μA VSD Forward On-Voltage IS= 8A; VGS= 0 2.0 V Ciss Input Capacitance VDS=25V,VGS=0V, F=1.0MHz 1550 pF Coss Output Capacitance 175 pF Crss Reverse Transfer Capacitance 75 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Td(on) Turn-on Delay Time VDD=250V,ID=8A RG=9.1Ω 15 21 ns Tr Rise Time 21 35 ns Td(off) Turn-off Delay Time 50 74 ns Tf Fall Time 20 30 ns · PDF pdfFactory Pro www.fineprint.cn |
유사한 부품 번호 - IRF841 |
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유사한 설명 - IRF841 |
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