FMX32S datasheet(1/3 Pages) THINKISEMI

부품명	FMX32S

상세설명	20Ampere,200Volt Insulated Fast Recovery Diode for Welding Machine

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제조업체	THINKISEMI [Thinki Semiconductor Co., Ltd.]

홈페이지	http://www.thinkisemi.com

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®

FMX32S

Pb Free Plating Product

FMX32S

20Ampere,200Volt Insulated Fast Recovery Diode for Welding Machine

Pb

·

Ultrafast Recovery Time

·

Soft Recovery Characteristics

·

Low Recovery Loss

·

Low Forward Voltage

·

High Surge Current Capability

·

Low Leakage Current

APPLICATION

GENERAL DESCRIPTION

· Freewheeling, Snubber, Clamp

· Inversion Welder

· PFC

· Plating Power Supply

· Ultrasonic Cleaner and Welder

· Converter & Chopper

· UPS

PRODUCT FEATURE

FMX32S using the lastest FRED FAB process with ultrafast and soft recovery characteristic for welding machine.

TO-3PF/TO-3PML

Internal Configuration

Cathode

Anode

Base Backside

—

Anode

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Rev.05

Unit

ABSOLUTE MAXIMUM RATINGS

T C =25°C unless otherwise specified

Symbol

Parameter/Test Conditions

Values

VR

Maximum D.C. Reverse Voltage

210

V

M i

R

titi

R

V lt

W

°C

N•m

°C /W

g

Unit

μA

mA

ns

A

ns

A

V

VRRM

Maximum Repetitive Reverse Voltage

IF(AV)

Average Forward Current

TC=110°C, Per Diode

10

A

TC=110°C, Per Package

20

IF(RMS)

RMS Forward Current

TC=110°C, Per Diode

14

IFSM

Non-Repetitive Surge Forward Current

TJ=45°C,t=10ms, 50Hz, Sine

100

PD

Power Dissipation

83

TJ

Junction Temperature

-55 to +150

TSTG

Storage Temperature Range

-55 to +150

Torque

Module-to-Sink

Recommended（M3）

1.1

Rth(J-C)

Junction-to-Case Thermal Resistance, Per Diode

1.5

Weight

5.2

ELECTRICAL CHARACTERISTICS

T C =25°C unless otherwise specified

Symbol

Parameter/Test Conditions

Min. Typ. Max.

10

VR =220V, TJ = 125°C

10

VF

Forward Voltage

IF=10A

0.9

1.1

IRM

Maximum Reverse Leakage Current

VR =220V

V

IF=10A,TJ=125°C

0.95

trr

Reverse Recovery Time (IF = 1A, diF/dt = -200A/μs, VR = 30V)

17

trr

Reverse Recovery Time

IF =10A,VR =100V,

32

IRRM

Maximum Reverse Recovery Current

diF/dt = -200A/μs

2.1

trr

Reverse Recovery Time

IF = 10A,VR =100V,

45

IRRM

Maximum Reverse Recovery Current

diF/dt = -200A/μs ,TJ=125°C

5

0.8

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