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IRFW450 데이터시트(Datasheet) 2 Page - Inchange Semiconductor Company Limited

부품명 IRFW450
상세내용  isc Silicon NPN Power Transistor
PDF  2 Pages
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제조사  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
IRFW450
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
500
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 7.9A
0.4
Ω
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
VDS= 400V; VGS= 0; Tj= 150℃
250
1000
μ A
VSD
Forward On-Voltage
IS= 14A; VGS= 0
1.4
V
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