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74LVC1G02GV 데이터시트(PDF) 2 Page - NXP Semiconductors |
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2 / 14 page 2004 Sep 07 2 Philips Semiconductors Product specification Single 2-input NOR gate 74LVC1G02 FEATURES • Wide supply voltage range from 1.65 V to 5.5 V • High noise immunity • Complies with JEDEC standard: – JESD8-7 (1.65 V to 1.95 V) – JESD8-5 (2.3 V to 2.7 V) – JESD8B/JESD36 (2.7 V to 3.6 V). •±24 mA output drive (VCC = 3.0 V) • CMOS low power consumption • Latch-up performance exceeds 250 mA • Direct interface with TTL levels • Inputs accept voltages up to 5 V • Multiple package options • ESD protection: HBM EIA/JESD22-A114-B exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. • Specified from −40 °C to +85 °C and −40 °C to +125 °C. DESCRIPTION The 74LVC1G02 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Input can be driven from either 3.3 V or 5 V devices. These features allow the use of these devices in a mixed 3.3 V and 5 V environment. Schmitt trigger action at all inputs makes the circuit tolerant for slower input rise and fall time. This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74LVC1G02 provides the single 2-input NOR function. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C; tr =tf ≤ 2.5 ns. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. The condition is VI = GND to VCC. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT tPHL/tPLH propagation delay inputs A, B to output Y VCC = 1.8 V; CL = 30 pF; RL =1kΩ 3.2 ns VCC = 2.5 V; CL = 30 pF; RL = 500 Ω 2.2 ns VCC = 2.7 V; CL = 50 pF; RL = 500 Ω 2.5 ns VCC = 3.3 V; CL = 50 pF; RL = 500 Ω 2.1 ns VCC = 5.0 V; CL = 50 pF; RL = 500 Ω 1.7 ns CI input capacitance 5 pF CPD power dissipation capacitance per buffer VCC = 3.3 V; notes 1 and 2 14 pF |
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