CDCS503PWR datasheet(3/11 Pages) TI1

부품명	CDCS503PWR

상세설명	Clock Buffer/Clock Multiplier With Optional SSC

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ABSOLUTE MAXIMUM RATINGS

RECOMMENDED OPERATING CONDITIONS

DEVICE CHARACTERISTICS

CDCS503

www.ti.com .................................................................................................................................................................................................. SCAS872 – MARCH 2009

over operating free-air temperature range (unless otherwise noted)

VALUE

UNIT

VDD

Supply voltage range

–0.5 to 4.6

V

VIN

Input voltage range(1)

–0.5 to 4.6

V

Vout

Output voltage range(1)

–0.5 to 4.6

V

IIN

Input current (VI < 0, VI > VDD)

20

mA

Iout

Continuous output current

50

mA

TST

Storage temperature range

–65 to 150

°C

TJ

Maximum junction temperature

125

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

MIN

NOM

MAX

UNIT

VDD

Supply voltage

3.0

3.6

V

FS = 0

8

32

fIN

Input frequency

MHz

FS = 1

8

27

VIL

Low level input voltage LVCMOS

0.3 VDD

V

VIH

High level input voltage LVCMOS

0.7 VDD

V

VI

Input voltage threshold LVCMOS

0.5 VDD

V

CL

Output load test LVCMOS

15

pF

IOH/IOL

Output current

±12

mA

TA

Operating free-air temperature

-40

85

°C

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

fout = 20 MHz; FS = 0, no SSC

19

IDD

Device supply current

mA

fout = 70 MHz; FS = 1, SSC = 2%

22

FS = 0

8

32

fOUT

Output frequency

MHz

FS = 1

32

108

IIH

LVCMOS input current

VI = VDD; VDD = 3.6 V

10

µA

IIL

LVCMOS input current

VI = 0 V; VDD = 3.6 V

–10

µA

IOH = - 0.1mA

2.9

VOH

LVCMOS high-level output voltage

IOH = - 8mA

2.4

V

IOH = - 12mA

2.2

IOL = 0.1mA

0.1

VOL

LVCMOS low-level output voltage

IOL = 8mA

0.5

V

IOL = 12mA

0.8

IOZ

High- impedance-state output current

OE = Low

–2

2

µA

tJIT(C-C)

Cycle to cycle jitter(1)

fout = 108 MHz; FS = 1,

110

ps

SSC = 1%, 10000 Cycles

tr/tf

Rise and fall time(1)

20%–80%

0.75

ns

Odc

Output duty cycle

45%

55%

fMOD

Modulation frequency

30

kHz

(1)

Measured with Test Load, see Figure 2.

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