CSD18509Q5B_16 datasheet(5/13 Pages) TI1

부품명	CSD18509Q5B

상세설명	N-Channel NexFET Power MOSFETs

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제조업체	TI1 [Texas Instruments]

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5 / 13 page

0.8

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−75

−25

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125

175

TC - Case Temperature (ºC)

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VGS - Gate-to- Source Voltage (V)

TC = 25°C,I D = 32A

TC = 125°C,I D = 32A

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Qg - Gate Charge (nC)

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VDS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

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VDS - Drain-to-Source Voltage (V)

VGS = 10V

VGS = 6V

VGS = 4.5V

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VGS - Gate-to-Source Voltage (V)

TC = 125°C

TC = 25°C

TC = −55°C

G001

CSD18509Q5B

www.ti.com

SLPS476 – JUNE 2014

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

VDS = 5 V

Figure 2. Saturation Characteristics

Figure 3. Transfer Characteristics

ID = 32 A

VDS = 20 V

Figure 4. Gate Charge

Figure 5. Capacitance

ID = 250 µA

Figure 6. Threshold Voltage vs Temperature

Figure 7. On-State Resistance vs Gate-to-Source Voltage

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유사한 부품 번호 - CSD18509Q5B_16

제조업체	부품명	데이터시트	상세설명
Texas Instruments	CSD18509Q5B	974Kb / 15P	[Old version datasheet] CSD18509Q5B N-Channel NexFET Power MOSFETs

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