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LM185H-1.2-QV 데이터시트(PDF) 5 Page - Texas Instruments |
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LM185H-1.2-QV 데이터시트(HTML) 5 Page - Texas Instruments |
5 / 18 page LM185-1.2QML www.ti.com SNVS384B – OCTOBER 2005 – REVISED JANUARY 2014 LM185-1.2RLQV SMD 5962R8759461 Post 100 krad Electrical Characteristics DC Parameters (1) (2) Sub- Symbol Parameter Conditions Notes Min Max Units groups ΔVRef Change in Reverse Breakdown IR = 10µA (3) -3 3 % 1 Voltage IR = 1mA (3) -3 3 % 1 IR = 20mA (3) -2.5 2.5 % 1 ΔVRef / ΔIR Reverse Breakdown Voltage 10µA ≤ IR ≤ 1mA -15 15 mV 1 Change with Current 1mA ≤ IR ≤ 20mA -25 25 mV 1 VF Forward Bias Voltage IF = 2mA -1.0 -0.4 V 1 (1) Radiation hardness assured (RHA) products are those with an "RLQV" suffix in the Texas Instruments' part number or those with an "R" in the SMD number, following "5962". (2) Testing and qualification for RHA products is done on a wafer level according to MIL-STD-883, Test Method 1019. Testing is performed with a 1.5X overtest. To be rated at 100 krad(Si) units are tested to 150 krad(Si) with all parameters remaining inside the post 100 krad Electrical DC test limits in this table. Interim test points are taken at 50, 75 and 100 krad(Si). (3) Change from the 0 rad reading. Copyright © 2005–2014, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: LM185-1.2QML |
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