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IRF6608 데이터시트(PDF) 3 Page - International Rectifier

부품명 IRF6608
상세설명  lHEXFET Power MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF6608 데이터시트(HTML) 3 Page - International Rectifier

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IRF6608
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3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
ID = 12A
VGS = 10V
0.1
1.0
10.0
100.0
1
10
100
30µs PULSE WIDTH
Tj = 25°C
2.7V
VGS
TOP
10V
7.0V
4.5V
3.8V
3.5V
3.2V
2.9V
BOTTOM
2.7V
0.1
1.0
10.0
100.0
1
10
100
30µs PULSE WIDTH
Tj = 150°C
2.7V
VGS
TOP
10V
7.0V
4.5V
3.8V
3.5V
3.2V
2.9V
BOTTOM
2.7V
2.5
2.8
3.0
3.3
3.5
VGS, Gate-to-Source Voltage (V)
1.0
10.0
100.0
VDS = 20V
30µs PULSE WIDTH
TJ = 25°C
TJ = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
010
20
30
40
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VDS= 24V
VDS= 15V
ID= 8.8A


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