전자부품 데이터시트 검색엔진 |
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IXYT80N90C3 데이터시트(PDF) 2 Page - IXYS Corporation |
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IXYT80N90C3 데이터시트(HTML) 2 Page - IXYS Corporation |
2 / 6 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYT80N90C3 IXYH80N90C3 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. g fs I C = 60A, VCE = 10V, Note 1 23 38 S C ies 4550 pF C oes V CE = 25V, VGE = 0V, f = 1MHz 243 pF C res 77 pF Q g(on) 145 nC Q ge I C = 80A, VGE = 15V, VCE = 0.5 • VCES 42 nC Q gc 65 nC t d(on) 34 ns t ri 103 ns E on 4.3 mJ t d(off) 90 ns t fi 86 ns E off 1.9 2.7 mJ t d(on) 34 ns t ri 100 ns E on 5.7 mJ t d(off) 103 ns t fi 98 ns E off 2.5 mJ R thJC 0.18 °C/W R thCS TO-247 0.21 °C/W Inductive load, T J = 25°C I C = 80A, VGE = 15V V CE = 0.5 • VCES, RG = 2 Note 2 Inductive load, T J = 150°C I C = 80A, VGE = 15V V CE = 0.5 • VCES, RG = 2 Note 2 TO-247 Outline Terminals: 1 - Gate 2 - Collector 3 - Emitter TO-268 Outline Terminals: 1 - Gate 2,4 - Collector 3 - Emitter e P 1 2 3 Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC |
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