전자부품 데이터시트 검색엔진 |
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IRLZ24N 데이터시트(PDF) 1 Page - International Rectifier |
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IRLZ24N 데이터시트(HTML) 1 Page - International Rectifier |
1 / 8 page HEXFET® Power MOSFET IRLZ24N PD - 91357C l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated VDSS = 55V RDS(on) = 0.06Ω ID = 18A S D G TO-220AB 07/12/02 Parameter Min. Typ. Max. Units RθJC Junction-to-Case 3.3 RθCS Case-to-Sink, Flat, Greased Surface 0.50 °C/W RθJA Junction-to-Ambient 62 Thermal Resistance Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Description Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A IDM Pulsed Drain Current 72 PD @TC = 25°C Power Dissipation 45 W Linear Derating Factor 0.30 W/°C VGS Gate-to-Source Voltage ±16 V EAS Single Pulse Avalanche Energy 68 mJ IAR Avalanche Current 11 A EAR Repetitive Avalanche Energy 4.5 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Absolute Maximum Ratings |
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