전자부품 데이터시트 검색엔진 |
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MTB020N03E3-0-UB-X 데이터시트(PDF) 4 Page - Cystech Electonics Corp. |
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MTB020N03E3-0-UB-X 데이터시트(HTML) 4 Page - Cystech Electonics Corp. |
4 / 8 page CYStech Electronics Corp. Spec. No. : C737E3 Issued Date : 2016.06.23 Revised Date : Page No. : 4/8 MTB020N03E3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 10 20 30 40 50 02 46 8 10 VDS, Drain-Source Voltage(V) 10V,9V,8V,7V,6V,5V 3.5V 4V VGS=3V Brekdown Voltage vs Ambient Temperature 0.8 0.9 1 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 10 100 1000 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 02 46 8 10 IDR, Reverse Drain Current (A) Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 20 40 60 80 100 120 140 160 180 200 02 4 6 8 1 VGS, Gate-Source Voltage(V) VGS=0V Tj=25°C Tj=150°C 0 ID=20A Drain-Source On-State Resistance vs Junction Tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS=10V, ID=20A RDS(ON)@Tj=25°C : 18mΩ typ. VGS=4.5V, ID=20A RDS(ON)@Tj=25°C : 25mΩ typ. |
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