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MTB050P10H8-0-T6-G 데이터시트(PDF) 1 Page - Cystech Electonics Corp. |
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MTB050P10H8-0-T6-G 데이터시트(HTML) 1 Page - Cystech Electonics Corp. |
1 / 11 page CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 1/11 MTB050P10H8 CYStek Product Specification P-Channel Enhancement Mode Power MOSFET MTB050P10H8 BVDSS -100V ID@VGS=-10V, TC=25°C -20A ID@VGS=-10V, TA=25°C -4.4A VGS=-10V, ID=-15A 39.5mΩ RDSON(TYP) VGS=-4.5V, ID=-12A 45.3mΩ Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package Symbol Outline MTB050P10H8 DFN5×6 Pin 1 D Ordering Information Device Package Shipping MTB050P10H8-0-T6-G DFN5×6 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel G:Gate D:Drain S:Source Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name S S S G D D D D S D D D S G S Pin 1 |
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