SI4810DY-T1 datasheet(1/5 Pages) VISHAY

부품명	SI4810DY-T1

상세설명	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4810DY

Vishay Siliconix

Document Number: 70802

S-31062—Rev. F, 26-May-03

www.vishay.com

2-1

N-Channel 30-V (D-S) MOSFET with Schottky Diode

MOSFET PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

30

0.0135 @ VGS = 10 V

10

30

0.020 @ VGS = 4.5 V

8

SCHOTTKY PRODUCT SUMMARY

VDS (V)

VSD (V)

Diode Forward Voltage

IF (A)

30

0.53 V @ 3.0 A

4.0

SD

S

D

SD

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

N-Channel MOSFET

DD

G

S

D

Schottky Diode

S

D

S

Ordering Information:

Si4810DY

Si4810DY-T1 (with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage (MOSFET)

VDS

30

Reverse Voltage (Schottky)

VDS

30

V

Gate-Source Voltage (MOSFET)

VGS

"20

V

Continuous Drain Current (TJ = 150_C) (MOSFET)a, b

TA = 25_C

ID

10

Continuous Drain Current (TJ = 150_C) (MOSFET)a, b

TA = 70_C

ID

8

Pulsed Drain Current (MOSFET)

IDM

50

A

Continuous Source Current (MOSFET Diode Conduction)a, b

IS

2.3

A

Average Foward Current (Schottky)

IF

4.0

Pulsed Foward Current (Schottky)

IFM

50

Maximum Power Dissipation (MOSFET)a, b

TA = 25_C

2.5

Maximum Power Dissipation (MOSFET)a, b

TA = 70_C

PD

1.6

W

Maximum Power Dissipation (Schottky)a, b

TA = 25_C

PD

2.0

W

Maximum Power Dissipation (Schottky)a, b

TA = 70_C

1.3

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Device

Symbol

Typical

Maximum

Unit

M

i

J

ti

t A bi

t (t

10

)a

MOSFET

50

Maximum Junction-to-Ambient (t

v 10 sec)a

Schottky

R

60

_C/W

Maximum Junction to Ambient (t

steady state)a

MOSFET

RthJA

70

_C/W

Maximum Junction-to-Ambient (t = steady state)a

Schottky

80

Notes

a.

Surface Mounted on FR4 Board.

b.

t

v 10 sec.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

유사한 부품 번호 - SI4810DY-T1

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI4810BDY	53Kb / 5P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. A, 26-May-03
Vishay Siliconix	SI4810BDY-T1	53Kb / 5P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. A, 26-May-03

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