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UC3725DW 데이터시트(PDF) 1 Page - Texas Instruments |
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UC3725DW 데이터시트(HTML) 1 Page - Texas Instruments |
1 / 5 page 1/94 BLOCK DIAGRAM • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout • Programmable Over-current Shutdown and Restart • Output Enable Function The UC1725 and its companion chip, the UC1724, provide all the nec- essary features to drive an isolated MOSFET transistor from a TTL in- put signal. A unique modulation scheme is used to transmit both power and signals across an isolation boundary with a minimum of external components. Protection circuitry, including under-voltage lockout, over-current shut- down, and gate voltage clamping provide fault protection for the MOS- FET. High level gate drive is guaranteed to be greater than 9 volts and less than 15 volts under all conditions. Uses include isolated off-line full bridge and half bridge drives for driv- ing motors, switches, and any other load requiring full electrical isola- tion. The UC1725 is characterized for operation over the full military tem- perature range of -55°C to +125°C while the UC2725 and UC3725 are characterized for -25°C to +85°C and 0°C to +70°C respectively. UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION UDG-92051-1 |
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