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SI1304DL-T1 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI1304DL-T1 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si1304DL Vishay Siliconix www.vishay.com 4 Document Number: 71315 S-41774—Rev. C, 04-Oct-04 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 12 20 4 8 Single Pulse Power, Junction-to-Ambient Time (sec) 16 10−3 10−2 1 10 600 10−1 10−4 100 −0.4 −0.3 −0.2 −0.1 −0.0 0.1 0.2 −50 −25 0 25 50 75 100 125 150 ID = 250 mA 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ − Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 360_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 10−3 10−2 110 10−1 10−4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Square Wave Pulse Duration (sec) 1 100 600 10 10−1 10−3 TA = 25_C 10−2 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71315. |
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