Features

Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Low profile surface mounted application in order to

optimize board space.

Low power loss, high efficiency.

High current capability, low forward voltage drop.

High surge capability.

Guardring for overvoltage protection.

Very tiny plastic SMD package.

Ultra high-speed switching.

Silicon epitaxial planar chip, metal silicon junction.

Lead-free parts meet environmental standards of

MIL-STD-19500 /228

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Package outline

Page 2

1.0A Surface Mount Schottky Barrier

Rectifiers - 20V-40V

PARAMETER

CONDITIONS

Forward rectified current

Forward surge current

Reverse current

Diode junction capacitance

Storage temperature

See Fig.1

8.3ms single half sine-wave (JEDEC methode)

f=1MHz and applied 4V DC reverse voltage

Symbol

MIN.

TYP.

MAX.

UNIT

I

O

I

FSM

I

R

C

J

T

STG

A

A

mA

pF

1.0

25

0.5

+175

-65

FM120-NS

FM130-NS

FM140-NS

20

30

40

14

21

28

20

30

40

-55 to +125

SYMBOLS

V

RRM

(V)

V

RMS

V

R

(V)

(V)

*1

*2

*3

*1 Repetitive peak reverse voltage

*2 RMS voltage

*3 Continuous reverse voltage

*4 Maximum forward voltage@I =1.0A

F

O

V

= V

T = 25 C

R

RRM

J

O

V

= V

T = 100 C

R

RRM

J

120

10

V

F

(V)

*4

0.55

Formosa MS

O

( C)

Operating

temperature

T ,

J

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

FM120-NS THRU FM140-NS

Mechanical data

Epoxy:UL94-V0 rated flame retardant

MIL-STD-750, Method 2026

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0.106(2.70)

0.091(2.30)

0.014(0.35)

0.010(0.25)

0.083(2.10)

0.067(1.70)

0.057(1.45)

0.041(1.05)

0.031(0.80)

0.024(0.60)

0.012(0.30)Typ.

0.005(0.12)

0.003(0.08)

Dimensions in inches and (millimeters)

SOD-323S

Document ID

Issued Date

Revised Date

Revision

Page.

DS-12161M

2008/02/10

2011/03/10

D

7

A

Thermal resistance

R

θJA

120

Junction to ambient

R

θJC

100

Junction to case

SMD Schottky Barrier Rectifier