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FM240-MH1 데이터시트(PDF) 2 Page - Formosa MS

부품명 FM240-MH1
상세설명  Chip Schottky Barrier Rectifier
Download  7 Pages
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제조업체  FORMOSA [Formosa MS]
홈페이지  http://www.formosams.com
Logo FORMOSA - Formosa MS

FM240-MH1 데이터시트(HTML) 2 Page - Formosa MS

  FM240-MH1 Datasheet HTML 1Page - Formosa MS FM240-MH1 Datasheet HTML 2Page - Formosa MS FM240-MH1 Datasheet HTML 3Page - Formosa MS FM240-MH1 Datasheet HTML 4Page - Formosa MS FM240-MH1 Datasheet HTML 5Page - Formosa MS FM240-MH1 Datasheet HTML 6Page - Formosa MS FM240-MH1 Datasheet HTML 7Page - Formosa MS  
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Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, l
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Features
Tiny plastic SMD package.
ow forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Suffix "-H" indicates Halogen free parts, ex. FM240-ΜΗ1-H.
Page 2
2.0A Surface Mount
Schottky Barrier Rectifiers - 40V-200V
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
Revised Date
Revision
Page.
FM240-MH1 THRU FM2200-MH1
Formosa MS
Chip Schottky Barrier Rectifier
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic,
Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
SOD-123H1
Weight : Approximated 0.0103 gram
UNITS
Volts
Volts
Volts
Volts
Amps
Amps
°C W
/
°C W
/
mA
pF
°C
°C
FM2200-MH1
Maximum ratings and Electrical Characteristics (AT T =25
A
oC unless otherwise noted)
0.92
200
140
200
FM2150-MH1
150
105
150
0.90
FM2100-MH1
-+
55 to 150
-+
55 to 150
100
2 0
.
50
0.5
10
160
76
70
100
0.85
38
FM260-MH1
60
42
60
0.70
FM240-MH1
-+
55 to 125
0.50
Notes 1: Measured at 1 0 MHz and applied reverse voltage of 4.0 Volts
.
40
28
40
SYMBOLS
TSTG
IO
VF
IR
CJ
RθJA
TJ
VDC
RθJC
VRRM
IFSM
VRMS
Peak forward surge current 8 3ms single half sine wave
.-
°C
°C
Maximum instantaneous forward voltage at I
2 0A
=.
F
=100
=25
TJ
TJ
Typical thermal resistance junction to ambient
Maximum average forward rectified current
Typical thermal resistance junction to case
Maximum repetitive peak reverse voltage
Operating junction temperature range
Typical junction capacitance Note 1
()
Maximum DC reverse current
Maximum DC blocking voltage
at rated DC blocking voltage
Storage temperature range
PARAMETER
Maximum RMS voltage
()
JEDEC Method
DS-12164D
2013/12/17
-
A
7
Package outline
Dimensions in inches and (millimeters)
SOD-123H1
0.031(0.8) Typ.
0.146(3.7)
0.130(3.3)
0.004(0.1) Typ.
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)


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