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IRLU7833 데이터시트(PDF) 1 Page - International Rectifier |
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IRLU7833 데이터시트(HTML) 1 Page - International Rectifier |
1 / 11 page www.irf.com 1 3/19/04 IRLR7833 IRLU7833 HEXFET® Power MOSFET Notes through
are on page 11 Applications Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use D-Pak IRLR7833 I-Pak IRLU7833 VDSS RDS(on) max Qg 30V 4.5m : 33nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation g W PD @TC = 100°C Maximum Power Dissipation g Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.05 RθJA Junction-to-Ambient (PCB Mount) gà ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 300 (1.6mm from case) 10 lbf xin (1.1Nxm) Max. 140 f 99 f 560 ± 20 30 -55 to + 175 140 0.95 71 PD - 94547A |
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