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SI2314EDS 데이터시트(PDF) 3 Page - Vishay Siliconix |
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SI2314EDS 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si2314EDS Vishay Siliconix New Product Document Number: 71611 S-04683—Rev. B, 10-Sep-01 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 300 600 900 1200 1500 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 –50 –25 0 25 50 75 100 125 150 0 2 4 6 8 0 4 8 12 16 20 0.00 0.03 0.06 0.09 0.12 0.15 036 9 12 15 VDS – Drain-to-Source Voltage (V) Coss Ciss VDS = 10 V ID = 5.0 A ID – Drain Current (A) VGS = 4.5 V ID = 5.0 A VGS = 1.8 V Gate Charge On-Resistance vs. Drain Current Qg – Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ – Junction Temperature (_C) VGS = 2.5 V VGS = 4.5 V Crss 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 0 3 6 9 12 15 0 123 4 VGS = 4.5 thru 2.0 V TC = 125_C –55 _C 1.5 V 25 _C Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 1.0 V 0.5 V |
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