전자부품 데이터시트 검색엔진
Selected language     Korean  ▼
부품명
         상세내용
Preview PDF Download HTML-1page HTML-10pages

KTX312T 데이터시트(Datasheet) 2 Page - KEC(Korea Electronics)

부품명 KTX312T
상세내용  EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
PDF  4 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  KEC [KEC(Korea Electronics)]
홈페이지  http://www.keccorp.com
Logo 

   
 2 page
background image
2003. 3. 11
2/4
KTX312T
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25
℃)
TRANSISTOR Q1
DIODE D1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Forward Voltage
VF
IF=1.0A
-
0.4
0.45
V
Reverse Current
IR
VR=20V
-
-
200
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-12V, IE=0
-
-
-0.1
μA
Emitter Cut-off Current
IEBO
VEB=-4V, IC=0
-
-
-0.1
μA
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-10μ
A, IE=0
-20
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0
-20
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-10μ
A, IC=0
-5
-
-
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-750mA, IB=-15mA
-
-120
-180
mV
Base-Emitter Saturation Voltage
VBE(sat)
IC=-750mA, IB=-15mA
-
-0.85
-1.2
V
DC Current Gain
hFE
VCE=-2V, IC=-100mA
200
-
560
Transition Frequency
fT
VCE=-2V, IC=-300mA
-
210
-
MHz
Collector Output Capacitance
Cob
VCB=-10V, f=1MHz
-
30
-
pF
Swiitching
Time
Turn-On Time
ton
-
50
-
nS
Storage Time
tstg
-
90
-
Fall Time
tf
-
15
-




Html 페이지

1  2  3  4 


데이터시트




링크 URL

ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl