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KTX312T 데이터시트(Datasheet) 1 Page - KEC(Korea Electronics)

부품명 KTX312T
상세내용  EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
PDF  4 Pages
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제조사  KEC [KEC(Korea Electronics)]
홈페이지  http://www.keccorp.com
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2003. 3. 11
1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX312T
EPITAXIAL PLANAR PNP TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
Revision No : 1
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
・Including two(TR, Diode) devices in TSV.
(Thin Super Mini type with 5 pin)
・Simplify circuit design.
・Reduce a quantity of parts and manufacturing process.
MAXIMUM RATINGS (Ta=25
℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
25
V
Reverse Voltage
VR
20
V
Average Forward Current
IO
1.0
A
Non-Repetitive Peak Surge current
IFSM
3
A
Junction Temperature
Tj
125
Storage Temperature
Tstg
-55~125
EQUIVALENT CIRCUIT (TOP VIEW)
* Package mounted on a ceramic board (600
㎟×0.8㎜)
TRANSISTOR Q1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-1.5
A
ICP
-3
A
Collector Power Dissipation
PC *
0.9
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~125
DIODE D1




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