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KTX421U 데이터시트(Datasheet) 1 Page - KEC(Korea Electronics)

부품명 KTX421U
상세내용  EPITAXIAL PLANAR NPN TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR
PDF  6 Pages
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제조사  KEC [KEC(Korea Electronics)]
홈페이지  http://www.keccorp.com
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POWER MANAGEMENT.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM
MILLIMETERS
A
B
D
G
US6
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
T
6
4
1.3 0.1
A1
5
+_
+_
+_
+_
+_
1. Q EMITTER
4. Q SOURCE
3. Q DRAIN
5. Q GATE
6. Q COLLECTOR
1
2
2. Q BASE
1
1
2
2
2008. 9. 23
1/6
SEMICONDUCTOR
TECHNICAL DATA
KTX421U
Revision No : 1
Q1 MAXIMUM RATING (Ta=25 )
12
3
6
54
Q1
Q2
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
15
V
Collector-Emitter Voltage
VCEO
12
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
500
mA
ICP *
1
A
Collector Power Dissipation
PC *
150
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
Q2 MAXIMUM RATING (Ta=25 )
BS
123
4
5
6
Lot No.
Type Name
MARKING
EQUIVALENT CIRCUIT (TOP VIEW)
* Single Pulse PW=1mS.
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGSS
20
V
DC Drain Current
ID
100
mA
Drain Power Dissipation
PC **
150
mW
Channel Temperature
Tch
150
Storage Temperature Range
Tstg
-55
150
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
EPITAXIAL PLANAR NPN TRANSISTOR
N CHANNEL MOS FIELD EFFECT TRANSISTOR




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