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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SSF12N60F 데이터시트(PDF) 2 Page - GOOD-ARK Electronics |
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SSF12N60F 데이터시트(HTML) 2 Page - GOOD-ARK Electronics |
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2 / 7 page  SSF12N60F 600V N-Channel MOSFET www.goodark.com Page 2 of 7 Rev.1.1 Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case③ — 2.5 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 600 — — V VGS = 0V, ID = 250μA — 0.55 0.7 VGS=10V,ID = 6A RDS(on) Static Drain-to-Source on-resistance — 1.25 — Ω TJ = 125℃ 2 — 4 VDS = VGS, ID = 250μA VGS(th) Gate threshold voltage — 1.84 — V TJ = 125℃ — — 1 VDS = 600V,VGS = 0V IDSS Drain-to-Source leakage current — — 50 μA TJ = 125℃ — — 100 VGS =30V IGSS Gate-to-Source forward leakage — — -100 nA VGS = -30V Qg Total gate charge — 55.1 — Qgs Gate-to-Source charge — 10.4 — Qgd Gate-to-Drain("Miller") charge — 19.9 — nC ID = 10A, VDS=400V, VGS = 10V td(on) Turn-on delay time — 40.6 — tr Rise time — 37.8 — td(off) Turn-Off delay time — 349 — tf Fall time — 72.5 — nS VGS=10V, VDS =200V, RL=40Ω, RGEN=50Ω ID =5A Ciss Input capacitance — 2151 — Coss Output capacitance — 184 — Crss Reverse transfer capacitance — 8.1 — pF VGS = 0V VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 12 A ISM Pulsed Source Current (Body Diode) — — 48 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.88 1.4 V IS=12A, VGS=0V trr Reverse Recovery Time — 586 — nS Qrr Reverse Recovery Charge — 5122 — nC TJ = 25°C, IF =10A, di/dt = 100A/μs |
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