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SSF2145CH6 데이터시트(PDF) 2 Page - GOOD-ARK Electronics |
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SSF2145CH6 데이터시트(HTML) 2 Page - GOOD-ARK Electronics |
2 / 5 page SSF2145CH6 20V Complementary MOSFET www.goodark.com Page 2 of 5 Rev.1.0 Junction-to-Ambient (PCB mounted, steady-state) ④ — 53 53 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions 20 — — VGS = 0V, ID = 250μA N-channel 22 — — TJ = 125°C -20 — — VGS = 0V, ID = -250μA V(BR)DSS Drain-to-Source breakdown voltage P-channel -22 — — V TJ = 125°C N-channel — 38 55 VGS=4.5V,ID = 3.6A P-channel — 68 80 VGS=-4.5V,ID = -3A N-channel — 64 75 VGS=2.5V,ID = 3.1A RDS(on) Static Drain-to-Source on-resistance P-channel — 89 100 mΩ VGS=-3.5V,ID = -2A N-channel 0.4 0.72 1 VDS = VGS, ID = 250μA P-channel 0.4 0.56 1 TJ = 125°C N-channel -0.4 -0.78 -1 VDS = VGS, ID = -250μA VGS(th) Gate threshold voltage P-channel -0.4 -0.66 -1 V TJ = 125°C N-channel — — 1 VDS = 20V,VGS = 0V IDSS Drain-to-Source leakage current P-channel — — -1 μA VDS = -20V,VGS = 0V N-channel — — 100 VGS =8V N-channel — — -100 VGS = -8V P-channel — — 100 VGS =8V IGSS Gate-to-Source forward leakage P-channel — — -100 nA VGS = -8V Ciss Input capacitance N-channel — 348 420 Coss Output capacitance N-channel — 58 70 Crss Reverse transfer capacitance N-channel — 32 39 VGS = 0V, VDS = 10V, ƒ = 1.0MHz Ciss Input capacitance P-channel — 519 622 Coss Output capacitance P-channel — 75 90 Crss Reverse transfer capacitance P-channel — 58 70 pF VGS = 0V, VDS = -10V, ƒ = 1.0MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions N-channel — — 4.8 IS Continuous Source Current (Body Diode) P-channel — — -2.9 A N-channel — — 17 MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) P-channel — — -11 A V SD Diode Forward N-channel — 0.69 1.2 V IS=0.94A, VGS=0V |
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