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SSF4N60F 데이터시트(PDF) 2 Page - GOOD-ARK Electronics |
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SSF4N60F 데이터시트(HTML) 2 Page - GOOD-ARK Electronics |
2 / 7 page SSF4N60F 600V N-Channel MOSFET www.goodark.com Page 2 of 7 Rev.1.1 Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case③ — 3.79 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 600 — — V VGS = 0V, ID = 250μA — 1.9 2.1 VGS=10V,ID = 2A RDS(on) Static Drain-to-Source on-resistance — 4.63 — Ω TJ = 125℃ 2 — 4 VDS = VGS, ID = 250μA VGS(th) Gate threshold voltage — 2.28 — V TJ = 125℃ — — 1 VDS = 600V,VGS = 0V IDSS Drain-to-Source leakage current — — 50 μA TJ = 125℃ — — 100 VGS =30V IGSS Gate-to-Source forward leakage — — -100 nA VGS = -30V Qg Total gate charge — 17.8 — Qgs Gate-to-Source charge — 3.7 — Qgd Gate-to-Drain("Miller") charge — 7.1 — nC ID = 4A, VDS=480V, VGS = 10V td(on) Turn-on delay time — 10.9 — tr Rise time — 16.3 — td(off) Turn-Off delay time — 40.0 — tf Fall time — 31.8 — ns VGS=10V, VDS=300V, RL=75Ω, RGEN=25Ω ID=4A Ciss Input capacitance — 537 — Coss Output capacitance — 59 — Crss Reverse transfer capacitance — 6 — pF VGS = 0V VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 4 A ISM Pulsed Source Current (Body Diode) — — 16 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.87 1.3 V IS=4A, VGS=0V trr Reverse Recovery Time — 311.6 — ns Qrr Reverse Recovery Charge — 2476 — nC TJ = 25°C, IF =4A, di/dt = 100A/μs |
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