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SSF5510G 데이터시트(PDF) 1 Page - GOOD-ARK Electronics |
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SSF5510G 데이터시트(HTML) 1 Page - GOOD-ARK Electronics |
1 / 4 page www.goodark.com Page 1 of 4 Rev.1.0 SSF5510G Preliminary Absolute Maximum Ratings Parameter Max. Units ID@Tc=25ْ C Continuous drain current,VGS@10V 56 ID@Tc=100ْC Continuous drain current,VGS@10V 40 IDM Pulsed drain current ① 224 A Power dissipation 90 W PD@TC=25ْC Linear derating factor 0.9 W/ْ C VGS Gate-to-Source voltage ±20 V dv/dt Peak diode recovery voltage 5.0 v/ns EAS Single pulse avalanche energy ② 405 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — — 1.4 RθJA Junction-to-ambient — — 62 ْC/W Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 55 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 8 10 mΩ VGS=10V,ID=34A VGS(th) Gate threshold voltage 2.0 4.0 V VDS=VGS,ID=250μA — — 2 VDS=55V,VGS=0V IDSS Drain-to-Source leakage current — — 10 μA VDS=44V, VGS=0V,TJ=150ْC SSF5510G Top View ID =56A BV=55V R DS (ON) =8mohm (typ.) FEATURES Advanced trench process technology Ultra low Rdson, typical 8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product DESCRIPTION The SSF5510G is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SS5510G is assembled in high reliability and qualified assembly house. APPLICATIONS Power switching application |
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