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SSF7N60F 데이터시트(PDF) 1 Page - GOOD-ARK Electronics |
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SSF7N60F 데이터시트(HTML) 1 Page - GOOD-ARK Electronics |
1 / 7 page SSF7N60F 600V N-Channel MOSFET Www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics Features and Benefits Description Absolute Max Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 7 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 4.4 IDM Pulsed Drain Current② 28 A Power Dissipation③ 48 W PD @TC = 25°C Linear Derating Factor 0.38 W/°C VDS Drain-Source Voltage 600 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=15.7mH 607.9 mJ IAS Avalanche Current @ L=15.7mH 8.8 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A TO-220F Marking and Pin Assignment Schematic Diagram Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. |
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유사한 설명 - SSF7N60F |
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