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SSF8N80 데이터시트(PDF) 2 Page - GOOD-ARK Electronics |
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SSF8N80 데이터시트(HTML) 2 Page - GOOD-ARK Electronics |
2 / 7 page SSF8N80 800V N-Channel MOSFET www.goodark.com Page 2 of 7 Rev.1.1 Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case③ — 0.7 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 62.5 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 800 — — V VGS = 0V, ID = 250μA — 1.38 1.55 VGS=10V,ID = 3.5A RDS(on) Static Drain-to-Source on-resistance — 3.16 — Ω TJ = 125℃ 2 — 4 VDS = VGS, ID = 250μA VGS(th) Gate threshold voltage — 1.96 — V TJ = 125℃ — — 1 VDS = 800V,VGS = 0V IDSS Drain-to-Source leakage current — — 50 μA TJ = 125℃ — — 100 VGS =30V IGSS Gate-to-Source forward leakage — — -100 nA VGS = -30V Qg Total gate charge — 24 — Qgs Gate-to-Source charge — 7.3 — Qgd Gate-to-Drain("Miller") charge — 9.4 — nC ID = 8A, VDS= 380V, VGS = 10V td(on) Turn-on delay time — 20 — tr Rise time — 40 — td(off) Turn-Off delay time — 57 — tf Fall time — 35 — ns VGS=10V, VDS=400V, RL=50Ω,RGEN=25Ω ID=8A Ciss Input capacitance — 1107 — Coss Output capacitance — 120 — Crss Reverse transfer capacitance — 4.7 — pF VGS = 0V VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 8 A ISM Pulsed Source Current (Body Diode) — — 32 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.87 1.4 V IS=7A, VGS=0V trr Reverse Recovery Time — 1015 — ns Qrr Reverse Recovery Charge — 5414 — nC TJ = 25°C, IF =8A, di/dt = 100A/μs |
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