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2 / 5 page Si4944DY Vishay Siliconix New Product www.vishay.com 2 Document Number: 72512 S-32131—Rev. A, 27-Oct-03 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 12.2 A 0.0075 0.0095 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 9.4 A 0.013 0.016 W Forward Transconductancea gfs VDS = 10 V, ID = 12.2 A 32 S Diode Forward Voltagea VSD IS = 1.9 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg 13.5 21 Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 12.2 A 7.1 nC Gate-Drain Charge Qgd 4.7 Gate Resistance Rg f = 1 MHz 0.5 1.0 1.7 W Turn-On Delay Time td(on) 10 15 Rise Time tr VDD = 15 V, RL = 15 W 10 15 Turn-Off Delay Time td(off) VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 40 60 ns Fall Time tf 12 20 Source-Drain Reverse Recovery Time trr IF = 1.9 A, di/dt = 100 A/ms 45 70 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 10 thru 5 V TC = 125_C −55_C 3 V 25_C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 4 V |
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