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SI9181DQ-AD-T1-E3 데이터시트(PDF) 3 Page - Vishay Siliconix

부품명 SI9181DQ-AD-T1-E3
상세설명  Micropower 350-mA CMOS LDO Regulator With Error Flag/Power-On-Reset
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Si9181
Vishay Siliconix
Document Number: 71119
S-40694—Rev. D, 19-Apr-04
www.vishay.com
3
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
V
V
1 V I
1 A
Limits
−40 to 85_C
Parameter
Symbol
VIN = VOUT(nom) + 1 V, IOUT = 1 mA
CIN = 2.2 mF, COUT = 2.2 mF, VSD = 1.5 V
Tempa
Minb
Typc
Maxb
Unit
Shutdown Supply Current
IIN(off)
VSD = 0 V
Room
0.1
1
mA
ADJ Pin Current
IADJ
ADJ = 1.2 V
Room
5
100
nA
Peak Output Current
IO(peak)
VOUT w 0.95 x VOUT(nom), tpw = 2 ms
Room
600
mA
Output Noise Voltage
eN
BW = 50 Hz to 100 kHz
w/o CNOISE
Room
200
mV (rms)
Output Noise Voltage
eN
BW = 50 Hz to 100 kHz
IOUT = 150 mA
CNOISE = 0.1 mF
Room
100
mV (rms)
f = 1 kHz
Room
60
Ripple Rejection
DVOUT/DVIN
IOUT = 150 mA
f = 10 kHz
Room
60
dB
pp
j
OUT
IN
OUT
f = 100 kHz
Room
40
Dynamic Line Regulation
DVO(line)
VIN : VOUT(nom) + 1 V to VOUT(nom) + 2 V
tR/tF = 5 ms, IOUT = 350 mA
Room
10
mV
Dynamic Load Regulation
DVO(load)
IOUT : 1 mA to 150 mA, tR/tF = 2 ms
Room
30
mV
VOUT Turn On Time
tON
VIN = 4.3 V
w/o CNOISE Cap
Room
5
ms
VOUT Turn-On-Time
tON
VIN = 4.3 V
VOUT = 3.3 V
CNOISE = 0.1 mF
Room
2
mS
Thermal Shutdown
Thermal Shutdown Junction Temp
tJ(s/d)
Room
165
_C
Thermal Hysteresis
tHYST
Room
20
_C
Short Circuit Current
ISC
VOUT = 0 V
Room
800
mA
Shutdown Input
SD Input Voltage
VIH
High = Regulator ON (Rising)
Full
1.5
VIN
V
SD Input Voltage
VIL
Low = Regulator OFF (Falling)
Full
0.4
V
SD Input Currente
IIH
VSD = 0 V, Regulator OFF
Room
0.01
mA
SD Input Currente
IIL
VSD = 6 V, Regulator ON
Room
1.0
mA
Shutdown Hysteresis
VHYST
Full
100
mV
Error Output
Output High Leakage
IOFF
ERROR = VOUT(nom)
Full
0.01
2
mA
Output Low Voltageg
VOL
ISINK = 2 mA
Full
0.4
Power_Good Trip Thresholdf, h
(Rising)
VTH
Full
0.93 x
VOUT
0.95 x
VOUT
0.97 x
VOUT
V
Hysteresisf
VHYST
Room
2% x
VOUT
Delay Pin Current Source
IDELAY
Room
1.2
2.2
3.0
mA
Notes
a.
Room = 25_C, Full = −40 to 85_C.
b.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Typical values for dropout voltage at VOUT w 2 V are measured at
VOUT = 3.3 V, while typical values for dropout voltage at VOUT < 2 V are measured at VOUT = 1.8 V.
d.
Dropout voltage is defined as the input to output differential voltage at which the output voltage drops 2% below the output voltage measured with a 1-V
differential, provided that VIN does not not drop below 2.0 V.
e.
The device’s shutdown pin includes a typical 6-MW internal pull-down resistor connected to ground.
f.
VOUT is defined as the output voltage of the DUT at 1 mA.
g.
The Error Output (Low) function is guaranteed from VOUT = 2.0 V to VOUT = 5.0 V.
h.
The Power_Good trip threshold function is guaranteed from VOUT = 1.5 V to VOUT = 5.0 V and VIN w 2.0 V.


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