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LF11333 데이터시트(PDF) 2 Page - National Semiconductor (TI) |
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LF11333 데이터시트(HTML) 2 Page - National Semiconductor (TI) |
2 / 18 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. (Note 2) Supply Voltage (V CC−VEE) 36V Reference Voltage V EE≤VR≤VCC Logic Input Voltage V R−4.0V≤VIN≤VR+6.0V Analog Voltage V EE≤VA≤VCC+6V; V A≤VEE+36V Analog Current |I A|<20 mA Power Dissipation (Note 3) Molded DIP (N Suffix) 500 mW Cavity DIP (D Suffix) 900 mW Operating Temperature Range LF11201, 2 and LF11331, 2, 3 −55˚C to +125˚C LF13201, 2 and LF13331, 2, 3 0˚C to +70˚C Storage Temperature −65˚C to +150˚C Soldering Information N and D Package (10 sec.) 300˚C SO Package: Vapor Phase (60 sec.) 215˚C Infrared (15 sec.) 220˚C Electrical Characteristics (Note 4) LF11331/2/3 LF13331/2/3 Symbol Parameter Conditions LF11201/2 LF13201/2 Units Min Typ Max Min Typ Max RON “ON” Resistance VA=0, ID=1mA TA=25˚C 150 200 150 250 Ω 200 300 200 350 Ω RON Match “ON” Resistance Matching TA=25˚C 5 20 10 50 Ω VA Analog Range ±10 ±11 ±10 ±11 V IS(ON) + Leakage Current in “ON” Condition Switch “ON,” VS=VD=±10V TA=25˚C 0.3 5 0.3 10 nA ID(ON) 3 100 3 30 nA IS(OFF) Source Current in “OFF” Condition Switch “OFF,” VS=+10V, TA=25˚C 0.4 5 0.4 10 nA VD=−10V 3 100 3 30 nA ID(OFF) Drain Current in “OFF” Condition Switch “OFF,” VS=+10V, TA=25˚C 0.1 5 0.1 10 nA VD=−10V 3 100 3 30 nA VINH Logical “1” Input Voltage 2.0 2.0 V VINL Logical “0” Input Voltage 0.8 0.8 V IINH Logical “1” Input Current VIN=5V TA=25˚C 3.6 10 25 3.6 40 100 µA IINL Logical “0” Input Current VIN=0.8 TA=25˚C 0.1 0.1 µA 11 µA tON Delay Time “ON” VS=±10V, (Figure 3)TA=25˚C 500 500 ns tOFF Delay Time “OFF” VS=±10V, (Figure 3)TA=25˚C 90 90 ns tON−tOFF Break-Before-Make VS=±10V, (Figure 3)TA=25˚C 80 80 ns CS(OFF) Source Capacitance Switch “OFF,” VS=±10V TA=25˚C 4.0 4.0 pF CD(OFF) Drain Capacitance Switch “OFF,” VD=±10V TA=25˚C 3.0 3.0 pF CS(ON) + Active Source and Drain Capacitance Switch “ON,” VS=VD=0V TA=25˚C 5.0 5.0 pF CD(ON) ISO(OFF) “OFF” Isolation ( Figure 4), (Note 5) TA=25˚C −50 −50 dB CT Crosstalk ( Figure 4), (Note 5) TA=25˚C −65 −65 dB SR Analog Slew Rate (Note 6) TA=25˚C 50 50 V/µs IDIS Disable Current ( Figure 5), (Note 7) TA=25˚C 0.4 1.0 0.6 1.5 mA 0.6 1.5 0.9 2.3 mA IEE Negative Supply Current All Switches “OFF,” VS=±10V TA=25˚C 3.0 5.0 4.3 7.0 mA 4.2 7.5 6.0 10.5 mA IR Reference Supply Current All Switches “OFF,” VS=±10V TA=25˚C 2.0 4.0 2.7 5.0 mA 2.8 6.0 3.8 7.5 mA ICC Positive Supply Current All Switches “OFF,” VS=±10V TA=25˚C 4.5 6.0 7.0 9.0 mA 6.3 9.0 9.8 13.5 mA Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Note 2: Refer to RETSF11201X, RETSF11331X, RETSF11332X and RETSF11333X for military specifications. Note 3: For operating at high temperature the molded DIP products must be derated based on a +100˚C maximum junction temperature and a thermal resistance of +150˚C/W, devices in the cavity DIP are based on a +150˚C maximum junction temperature and are derated at ±100˚C/W. www.national.com 2 |
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