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TPC8403 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 TPC8403
상세설명  Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TPC8403 데이터시트(HTML) 1 Page - Toshiba Semiconductor

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TPC8403
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
(P Channel U-MOSII/N Channel U-MOSII)
TPC8403
Motor Drive Applications
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)
N Channel RDS (ON) = 25 mΩ (typ.)
• High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.)
N Channel |Yfs| = 7.8 S (typ.)
• Low leakage current:
P Channel IDSS = −10 µA (VDS = −30 V)
N Channel IDSS = 10 µA (VDS = 30 V)
• Enhancement mode
: P Channel Vth = −1.0~−2.2 V (VDS = −10 V, ID = −1 mA)
: N Channel Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Rating
Characteristics
Symbol
P Channel N Channel
Unit
Drain-source voltage
VDSS
−30
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−30
30
V
Gate-source voltage
VGSS
±20
±20
V
DC
(Note 1)
ID
−4.5
6
Drain current
Pulse
(Note 1)
IDP
−18
24
A
Single-device operation
(Note 3a)
PD(1)
1.5
1.5
Drain power
dissipation
(t
= 10s)
(Note 2a)
Single-device value at
dual operation (Note 3b)
PD(2)
1.1
1.1
Single-device operation
(Note 3a)
PD(1)
0.75
0.75
Drain power
dissipation
(t
= 10s)
(Note 2b)
Single-device value at
dual operation (Note 3b)
PD(2)
0.45
0.45
W
Single pulse avalanche energy
EAS
26.3
(Note 4a)
46.8
(Note 4b)
mJ
Avalanche current
IAR
−4.5
6
A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
EAR
0.11
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
N-ch
P-ch


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