전자부품 데이터시트 검색엔진 |
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TPC8403 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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TPC8403 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 11 page TPC8403 2004-07-06 1 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) TPC8403 Motor Drive Applications Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.) • High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.) N Channel |Yfs| = 7.8 S (typ.) • Low leakage current: P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) • Enhancement mode : P Channel Vth = −1.0~−2.2 V (VDS = −10 V, ID = −1 mA) : N Channel Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Rating Characteristics Symbol P Channel N Channel Unit Drain-source voltage VDSS −30 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 30 V Gate-source voltage VGSS ±20 ±20 V DC (Note 1) ID −4.5 6 Drain current Pulse (Note 1) IDP −18 24 A Single-device operation (Note 3a) PD(1) 1.5 1.5 Drain power dissipation (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) PD(2) 1.1 1.1 Single-device operation (Note 3a) PD(1) 0.75 0.75 Drain power dissipation (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b) PD(2) 0.45 0.45 W Single pulse avalanche energy EAS 26.3 (Note 4a) 46.8 (Note 4b) mJ Avalanche current IAR −4.5 6 A Repetitive avalanche energy Single-device value at operation (Note 2a, 3b, 5) EAR 0.11 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 N-ch P-ch |
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