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CSD17581Q3A 데이터시트(PDF) 1 Page - Texas Instruments

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부품명 CSD17581Q3A
상세설명  30-V N-Channel NexFET Power MOSFETs
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Qg - Gate Charge (nC)
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
D004
ID = 16 A
VDS = 15 V
VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
D007
TC = 25°C, I D = 16 A
TC = 125°C, I D = 16 A
1
D
2
D
3
D
4
D
D
5
G
6
S
7
S
8
S
P0093-01
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD17581Q3A
SLPS629 – OCTOBER 2016
CSD17581Q3A 30-V N-Channel NexFET™ Power MOSFETs
1
1 Features
1
Low Qg and Qgd
Low RDS(on)
Low Thermal Resistance
Avalanche Rated
Lead-Free
RoHS Compliant
Halogen Free
SON 3.3-mm × 3.3-mm Plastic Package
2 Applications
Point-of-Load Synchronous Buck Converter for
Applications in Networking, Telecom, and
Computing Systems
Motor Control Applications
Optimized for Control FET Applications
3 Description
This
30-V,
3.2-mΩ,
SON
3.3-mm
×
3.3-mm
NexFET™ power MOSFET is designed to minimize
losses in power conversion applications.
Top View
.
.
Product Summary
TA = 25°C
TYPICAL VALUE
UNIT
VDS
Drain-to-Source Voltage
30
V
Qg
Gate Charge Total (4.5 V)
20
nC
Qgd
Gate Charge Gate-to-Drain
4
nC
RDS(on)
Drain-to-Source On-Resistance
VGS = 4.5 V
3.9
m
VGS = 10 V
3.2
m
VGS(th)
Threshold Voltage
1.3
V
.
Device Information(1)
DEVICE
MEDIA
QTY
PACKAGE
SHIP
CSD17581Q3A
13-Inch Reel
2500
SON
3.30-mm × 3.30-mm
Plastic Package
Tape
and
Reel
CSD17581Q3AT
7-Inch Reel
250
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
30
V
VGS
Gate-to-Source Voltage
±20
V
ID
Continuous Drain Current (Package Limited)
60
A
Continuous Drain Current (Silicon Limited),
TC = 25°C
101
Continuous Drain Current(1)
21
IDM
Pulsed Drain Current(2)
154
A
PD
Power Dissipation(1)
2.8
W
Power Dissipation, TC = 25°C
63
TJ,
Tstg
Operating Junction Temperature,
Storage Temperature
–55 to 150
°C
EAS
Avalanche Energy, Single Pulse
ID = 39 A, L = 0.1 mH, RG = 25 Ω
76
mJ
(1) Typical RθJA = 45°C/W on a 1-in
2, 2-oz Cu pad on a
0.06-in thick FR4 PCB.
(2) Max RθJC = 2°C/W, pulse duration ≤100 μs, duty cycle ≤1%.
RDS(on) vs VGS
Gate Charge


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