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CSD17581Q3A 데이터시트(PDF) 1 Page - Texas Instruments |
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CSD17581Q3A 데이터시트(HTML) 1 Page - Texas Instruments |
1 / 13 page Qg - Gate Charge (nC) 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 D004 ID = 16 A VDS = 15 V VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 9 10 D007 TC = 25°C, I D = 16 A TC = 125°C, I D = 16 A 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD17581Q3A SLPS629 – OCTOBER 2016 CSD17581Q3A 30-V N-Channel NexFET™ Power MOSFETs 1 1 Features 1 • Low Qg and Qgd • Low RDS(on) • Low Thermal Resistance • Avalanche Rated • Lead-Free • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems • Motor Control Applications • Optimized for Control FET Applications 3 Description This 30-V, 3.2-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View . . Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 30 V Qg Gate Charge Total (4.5 V) 20 nC Qgd Gate Charge Gate-to-Drain 4 nC RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 3.9 m Ω VGS = 10 V 3.2 m Ω VGS(th) Threshold Voltage 1.3 V . Device Information(1) DEVICE MEDIA QTY PACKAGE SHIP CSD17581Q3A 13-Inch Reel 2500 SON 3.30-mm × 3.30-mm Plastic Package Tape and Reel CSD17581Q3AT 7-Inch Reel 250 (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ±20 V ID Continuous Drain Current (Package Limited) 60 A Continuous Drain Current (Silicon Limited), TC = 25°C 101 Continuous Drain Current(1) 21 IDM Pulsed Drain Current(2) 154 A PD Power Dissipation(1) 2.8 W Power Dissipation, TC = 25°C 63 TJ, Tstg Operating Junction Temperature, Storage Temperature –55 to 150 °C EAS Avalanche Energy, Single Pulse ID = 39 A, L = 0.1 mH, RG = 25 Ω 76 mJ (1) Typical RθJA = 45°C/W on a 1-in 2, 2-oz Cu pad on a 0.06-in thick FR4 PCB. (2) Max RθJC = 2°C/W, pulse duration ≤100 μs, duty cycle ≤1%. RDS(on) vs VGS Gate Charge |
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